4.6 Article

Electrochemical characterization of a 1,8-octanedithiol self-assembled monolayer (ODT-SAM) on a Au(111) single crystal electrode

期刊

ELECTROCHIMICA ACTA
卷 53, 期 27, 页码 8026-8033

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2008.06.017

关键词

self-assembled monolayer (SAM); octanedithiol; cyclic voltammetry; double layer capacitance; electrochemical impedance spectroscopy

资金

  1. Ministerio de Educacion y Ciencia (MEC) [CTQ2004-00977, CTQ2007-62723/BQU]
  2. F.P.I. program

向作者/读者索取更多资源

Recently, it has becoming increasingly important to control the organization of self-assembled monolayers (SAMs) of omega-functionalized thiols for its potential applications in the Construction of more complex molecular architectures. In this paper, we report on the spontaneous formation of a SAM of octanedithiol (ODT) as a function of the modification time. Electrochemical techniques such as cyclic voltammetry, double layer capacitance and electrochemical impedance spectroscopy are used for the characterization of this monolayer. The increase in modification time brings about changes in the octanedithiol self-assembled monolayer (ODT-SAM) reductive desorption voltammograms that indicate an evolution toward a more ordered and compact monolayer. This trend has also been found by following the changes in the electron transfer processes of the redox probe K3Fe(CN)(6). In fact, the ODT-SAM formed at low-modification time does not significantly perturb the electrochemical response as it is typical of either a low coverage or of the presence of large defects in the layer. Upon increasing the modification time, the voltammograms of the redox probe adopt a sigmoidal shape indicating the existence of pinholes in the monolayer distributed as an array of microelectrodes. The surface coverage as well as the size and distribution of these pinholes have been determined by the impedance technique that gives a more reliable evaluation of these monolayer structural parameters. (C) 2008 Elsevier Ltd. All rights reserved.

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