4.6 Article

High precision electrochemical micromachining based on confined etchant layer technique

期刊

ELECTROCHEMISTRY COMMUNICATIONS
卷 28, 期 -, 页码 135-138

出版社

ELSEVIER SCIENCE INC
DOI: 10.1016/j.elecom.2012.12.017

关键词

Electrochemical micromachining; Electrochemical instrument; Confined etchant layer technique; CELT; n-GaAs microlens array

资金

  1. National Natural Science Foundation of China [91023047, 91023006, 21021002]
  2. Natural Science Foundation of Fujian Province of China [2012J06004]
  3. Fundamental Research Funds for the Central Universities [2010121022]
  4. Scientific Research Foundation for the Returned Overseas Chinese Scholars (State Education Ministry)

向作者/读者索取更多资源

High-quality products come from high-quality instrument. We present here an optimized instrument for electrochemical micromachining, in which a granite bridge base, a macro-micro dual driven positioning stage and a force-displacement sensing module are combined to promote dramatically the tool-workpiece alignment, in-situ monitoring and product quality. As a testing experiment, a polymethylmethacrylate (PMMA) microlens array with a diameter of 110 mu m and a height of 3.5 mu m has been transferred successfully onto the surface of an n-GaAs wafer by the confined etchant layer technique (CELT). The machining tolerance is about 3.4 nm and the surface roughness is lower than 8.0 nm. Moreover, the presented techniques have significance in the precise electrochemical instruments for not only micromachining but also scanning electrochemical probe techniques. (c) 2012 Elsevier B.V. All rights reserved.

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