Highly doped silicon nanowires based electrodes for micro-electrochemical capacitor applications

Highly doped (both n and p-type dopings) silicon nanowires (SiNWs) have been deposited via Chemical Vapor Deposition and investigated as electrode materials for micro-capacitor in a standard organic based electrolyte. Silicon nanostructuration enables to increase areal capacitance. Double layer capacitance values up to 46 mu F.cm(-2) have been measured. Micro capacitors based on two SiNWs electrodes exhibit an excellent cycling ability and power density as high as 1.6 mW.cm(-2). (C) 2012 Elsevier B.V. All rights reserved.