期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 14, 期 8, 页码 H333-H336出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3591435
关键词
conducting polymers; electrical resistivity; electrodes; organic insulating materials; organic semiconductors; printing; thin film transistors
资金
- ISTK [B551179-09-06-00]
- Ministry of Knowledge Economy (MKE) of Korea [2008-F052-01]
- Ministry of Knowledge Economy (MKE) and Daedeok Innopolis [A2010D-D006]
We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 mu m and resistivity of 3 x 10(-6) Omega cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 mu m were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3591435] All rights reserved.
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