期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 14, 期 3, 页码 D26-D29出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3526142
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资金
- EC [NMP3-CT-2005-500140]
- French Agence Nationale de la Recherche (ANR) [NT05-3_41834]
- CNRS
Copper (I) amidinate [Cu(i-Pr-Me-AMD)](2) was investigated to produce copper films in conventional low pressure chemical vapor deposition (CVD) using hydrogen as reducing gas-reagent. Copper films were deposited on steel, silicon, and SiO2/Si substrates in the temperature range 200-350 degrees C at a total pressure of 1333 Pa. The growth rate on steel follows the surface reaction between atomic hydrogen and the entire precursor molecule up to 240 degrees C. A significant increase of the growth rate at temperatures higher than 300 degrees C was attributed to thermal decomposition of the precursor molecule. It is shown that [Cu(i-Pr-Me-AMD)](2) meets the specifications for the metal organic chemical vapor deposition of Cu-based alloy coatings containing oxophilic elements such as aluminum. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3526142] All rights reserved.
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