相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer
Jang-Sik Lee et al.
ADVANCED MATERIALS (2009)
Artificial electrical dipole in polymer multilayers for nonvolatile thin film transistor memory
Chia-Chieh Chang et al.
APPLIED PHYSICS LETTERS (2008)
Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties
Jang-Sik Lee et al.
NATURE NANOTECHNOLOGY (2007)
Phase-change materials for rewriteable data storage
Matthias Wuttig et al.
NATURE MATERIALS (2007)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)
Nonvolatile nanocrystal charge trap flash memory devices using a micellar route to ordered arrays of cobalt nanocrystals
Chiyoung Lee et al.
APPLIED PHYSICS LETTERS (2007)
Highly scalable non-volatile and ultra-lowpower phase-change nanowire memory
Se-Ho Lee et al.
NATURE NANOTECHNOLOGY (2007)
Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric
Kwang H. Lee et al.
APPLIED PHYSICS LETTERS (2007)
Memory technology in the future
Kinam Kim et al.
MICROELECTRONIC ENGINEERING (2007)
Nonvolatile memory elements based on organic materials
J. Campbell Scott et al.
ADVANCED MATERIALS (2007)
Organic non-volatile memory based on pentacene field-effect transistors using a polymeric gate electret
Kang-Jun Baeg et al.
ADVANCED MATERIALS (2006)
A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte
Michael N. Kozicki et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2006)
Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
Zhengchun Liu et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2006)
Low-voltage pentacene field-effect transistors with ultrathin polymer gate dielectrics
SY Yang et al.
APPLIED PHYSICS LETTERS (2006)
Data retention characteristics of nitride-based charge trap memory devices with high-k dielectrics and high-work-function metal gates for multi-gigabit flash memory
Jang-Sik Lee et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Low-voltage and high-field-effect mobility organic transistors with a polymer insulator
Y Jang et al.
APPLIED PHYSICS LETTERS (2006)
Low-voltage organic transistors with an amorphous molecular gate dielectric
M Halik et al.
NATURE (2004)
Introduction to Flash memory
R Bez et al.
PROCEEDINGS OF THE IEEE (2003)
Organic electrical bistable devices and rewritable memory cells
LP Ma et al.
APPLIED PHYSICS LETTERS (2002)