期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 13, 期 12, 页码 H428-H431出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3489075
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A technique is presented to create porous silicon (PS) thin films with long-term optical stability when exposed to normal room conditions. This technique requires the thin films to undergo a rapid thermal annealing treatment at a relatively low temperature of 600 degrees C in N-2 atmosphere for 6 min. Annealing at such a low temperature enables the surface passivation of PS via nitridation without causing the excessive roughness and sintering widely observed at higher annealing temperatures. A mechanism similar to the Haber process is proposed to explain the surface nitridation, in which the nitrogen atmosphere interacts with the as-anodized hydrogen surface species. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3489075] All rights reserved.
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