相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
L. Goux et al.
JOURNAL OF APPLIED PHYSICS (2010)
Resistance transition in metal oxides induced by electronic threshold switching
D. Ielmini et al.
APPLIED PHYSICS LETTERS (2009)
Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells
Ludovic Goux et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory
Myoung-Jae Lee et al.
NANO LETTERS (2009)
Electrical evidence of unstable anodic interface in Ru/HfOx/TiN unipolar resistive memory
Heng Yuan Lee et al.
APPLIED PHYSICS LETTERS (2008)
Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
Yong-Mu Kim et al.
JOURNAL OF APPLIED PHYSICS (2008)
Low-power switching of nonvolatile resistive memory using hafnium oxide
Heng-Yuan Lee et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack
Doo Seok Jeong et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2007)
Dielectric breakdown mechanisms in gate oxides
S Lombardo et al.
JOURNAL OF APPLIED PHYSICS (2005)
Electron localization determines defect formation on ceria substrates
F Esch et al.
SCIENCE (2005)
Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs
CH Tung et al.
IEEE ELECTRON DEVICE LETTERS (2002)