相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing
Mitsuru Nakata et al.
APPLIED PHYSICS EXPRESS (2009)
Gate-bias stress in amorphous oxide semiconductors thin-film transistors
M. E. Lopes et al.
APPLIED PHYSICS LETTERS (2009)
Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors
Jae Kyeong Jeong et al.
APPLIED PHYSICS LETTERS (2008)
The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs
P. Barquinha et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2008)
High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
Elvira Fortunato et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Factors controlling electron transport properties in transparent amorphous oxide semiconductors
Hideo Hosono et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2008)
High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering
Wantae Lim et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
Transparent, high mobility of InGaZnO thin films deposited by PLD
Arun Suresh et al.
THIN SOLID FILMS (2008)
Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system
Tatsuya Iwasaki et al.
APPLIED PHYSICS LETTERS (2007)
Fast thin-film transistor circuits based on amorphous oxide semiconductor
Masato Ofuji et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator
KP Pernstich et al.
JOURNAL OF APPLIED PHYSICS (2004)