期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 12, 期 9, 页码 H336-H339出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3156830
关键词
aluminium compounds; heat treatment; semiconductor thin films; thin film transistors; transparency; X-ray diffraction
资金
- Ministry of Knowledge Economy (MKE)
- Korea Industrial Technology Foundation (KOTEF)
- Korea Science and Engineering Foundation (KOSEF)
- Korean government (MEST) [R11-2007-045-03002-0]
Thin-film transistors (TFTs) with aluminum indium oxide channel layers were fabricated via a simple and low cost solution process. The substitution of Al on In sites in the In(2)O(3) lattice was verified by X-ray diffraction analysis. The maximum heat-treatment temperature of these transistors was 350 degrees C, and the resultant thin films were highly transparent (with >90% transmittance). The fabricated TFTs operated in an enhancement mode on a positive bias and showed an n-type semiconductor behavior. They exhibited a channel mobility of 19.6 cm(2)/V s, a subthreshold slope of 0.3 V/decade, and an on-to-off current ratio greater than 10(8).
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