期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 12, 期 1, 页码 H1-H3出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3002394
关键词
dangling bonds; electrical resistivity; elemental semiconductors; Fermi level; ion implantation; nickel alloys; nitrogen; Schottky barriers; semiconductor-metal boundaries; silicon; silicon alloys; texture
Nitrogen implantation prior to nickel silicidation is shown to result in a modified Schottky barrier height at the NiSi/Si(001) interface. Passivation of dangling bonds at the NiSi/Si interface to de-pin the Fermi level, axiotaxy texture, and strain-induced barrier lowering are determined to be the main mechanisms for the barrier-height modification. Significant barrier-height reduction (by as much as 0.37 eV) can be achieved on n-type silicon. However, the resistivity of nickel silicide increases significantly beyond a critical nitrogen-implant dose (1x10(15) cm(-2)).
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