期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 12, 期 5, 页码 H185-H187出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3093094
关键词
annealing; electroluminescence; gallium compounds; II-VI semiconductors; indium compounds; light emitting diodes; palladium compounds; semiconductor quantum wells
资金
- Korea Science and Engineering Foundation (KOSEF), Korea government (MOST) [R17-2007-078-01000-0]
- Samsung Electro-Mechanics Co., Ltd., in Korea
This article reports the electrical properties of p-GaN annealed at low activation temperature by using a PdZn film in green InGaN/GaN multiquantum well (MQW) light-emitting diodes (LEDs). Electroluminescence (EL) intensity of green MQW LED annealed at 600 degrees C using PdZn was improved by 33% at 20 mA compared to that annealed at 800 degrees C without PdZn. These results are attributed to an increase of the hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and a decrease in thermal damage of MQW at low activation temperature.
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