期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 11, 期 6, 页码 H157-H159出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2903209
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The effect of the channel deposition pressure on the device performance of amorphous indium-gallium-zinc oxide (a-IGZO) transistors was investigated in detail. The performance of the fabricated transistors improved monotonously with decreasing chamber pressure: at a pressure of 1 mTorr, the field-effect mobility (mu(FE)) and subthreshold gate swing (S) of the a-IGZO thin-film transistors were dramatically improved to 21.8 cm(2)/Vs and 0.17 V/decade, respectively, compared to those (11.4 cm(2)/Vs and 0.87 V/decade) of the reference transistors prepared at 5 mTorr. This enhancement in the subthreshold characteristics was attributed to the reduction of the bulk defects of the a-IGZO channel, which might result from the greater densification of the a-IGZO films at the lower deposition pressure. (c) 2008 The Electrochemical Society.
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