期刊
ELECTROANALYSIS
卷 21, 期 20, 页码 2185-2189出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/elan.200900271
关键词
Explosives; Field-effect transistors; Sensors; TNT
资金
- Ministry of Defense, Israel
The gate surfaces of ion-sensitive field-effect transistor (ISFET) devices were functionalized with the pi-donor units, 6-hydroxydopamine (1) or 4-aminothiophenol (2). Concentration of trinitrotoluene, TNT, on the gate via pi-donor-acceptor interactions yields charge-transfer complexes that alter the gate potential. This enables the label-free analysis of TNT with a detection limit corresponding to 1 x 10(-7) M.
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