A Switchable High-Sensitivity Photodetecting and Photovoltaic Device with Perovskite Absorber

Amplified photocurrent gain has been obtained by photodiodes of inorganic semiconductors such as GaAs and Si. The avalanche photodiode, developed for high-sensitivity photo-detectors, requires an expensive vapor-phase epitaxy manufacture process and high driving voltage (50-150 V). Here, we show that a low-cost solution-processed device using a planar-structured ferroelectric organo-lead triiodide perovskite enables light detection in a large dynamic range of incident power (10(-7)-10(-1) W cm(-2)) by switching with small voltage (-0.9 to +0.5 V). The device achieves significantly high external quantum conversion efficiency (EQE) up to 2.4 x 10(5)% (gain value of 2400) under weak monochromatic light. On a single dual-functional device, incident small power (0.2-100 mu W cm(-2)) and medium to large power (>0.1 mW cm(-2)) are captured by reverse bias and forward bias modes, respectively, with linear responsivity of current. For weak light detection, the device works with a high responsivity value up to 620 A W-1.