期刊
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 6, 期 5, 页码 881-886出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.5b00122
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资金
- Advanced Low Carbon Technology Research and Development Program, Japan Science and Technology Agency (ALCA-JST)
The sequential fabrication scheme of the CH3NH3PbI3 layer has been improved to fabricate planar-structure CH3NH3PbI3 perovskite solar cells using CuSCN hole-transporting material (HTM). In the PbI2 layer fabricated by the spin-coating method, at first, small amounts of CH3NH3I (MAI) and DMSO were incorporated as the first-drip precursor layer on a flat TiO2 layer. On the first-drip precursor layers, an MAI solution was applied by either soaking (MAI-soaking method) or dripping using successive spin coating (MAI-dripping). The morphology and crystal transformations were observed by SEM and XRD, respectively. Using the normal sequential MAI-soaking method, we were unable to fabricate planar CH3NH3PbI3 perovskite solar cells with CuSCN HTM. Using the MAI-dripping method, however, a significant photovoltaic effect has been observed to be planar solar cells.
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