期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 119, 期 24, 页码 13929-13936出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.5b02634
关键词
-
资金
- Agency for Science, Technology and Research (A*STAR), Singapore
Vertical integration of two-dimensional materials has recently emerged as an exciting method for the design of novel electronic and optoelectronic devices. Using density functional theory, we investigate the structural and electronic properties of two heterostructures, graphene/phosphorene (G/BP) and hexagonal boron nitride/phosphorene (BN/BP). We found that the interlayer distance, binding energy, and charge transfer in G/BP and BN/BP are similar. Inter layer noncovalent bonding is predicted due to the weak coupling between the p(z) orbital of BP and the pi orbital of graphene and BN. A small amount of electron transfer from graphene and BN, scaling with the vertical strain, renders BP slightly n-doped for both heterostructures. Several attractive characteristics of BP, including direct band gap and linear dichroism, are preserved. However, a large redistribution of electrostatic potential across the interface is observed, which may significantly renormalize the carrier dynamics and affect the excitonic behavior of BP. Our work suggests that graphene and BN can be used not only as an effective capping layer to protect BP from its structural and chemical degradation while still maintaining its major electronic characteristics but also as an active layer to tune the carrier dynamics and optical properties of BP.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据