Defect Scaling with Contact Area in EGaIn-Based Junctions: Impact on Quality, Joule Heating, and Apparent Injection Current

Although the tunneling rates decrease exponentially with a decay coefficient beta close to 1.0 n(C)(-1) across n-alkanethiolate (SCn) monolayer based tunneling junctions determined over a multitude of test beds, the origins of the large spread of injection current densitiesthe hypothetical current density, J(0) (in A/cm(2)), that flows across the junction when n = 0of up to 12 orders of magnitude are unclear. Every type of junction contains a certain distribution of defects induced by, for example, defects in the electrode materials or impurities. This paper describes that the presence of defects in the junctions is one of the key factors that cause an increase in the observed values of J(0). We controlled the number of defects in Ag-TS-SCn//GaOx/EGaIn junctions by varying the geometrical contact area (Ageo) of the junction. The value of J(0) (similar to 10 (2) A/cm(2)) is independent of the junction size when A(geo) is small (<9.6 x 10 (2) mu m(2)) but increased by 3 orders of magnitude (from 102 to 105 A/cm2) when A(geo) increased from 9.6 x 10 (2) to 1.8 x 10(-4) mu m2. With increasing J(0) values the yields in nonshorting junctions decreased (from 78 to 44%) and beta increased (from 1.0 to 1.2 nC(1)). We show that the quality of the junctions can be qualitatively determined by examining the curvature of the d(J)/d(V) curves (defects change the sign of the curvature from positiveassociated with tunnelingto negativeassociated with Joule heating) and fitting the J(V) curves to the full Simmons equation to (crudely) estimate the effective separation of the top- and bottom-electrode d(eff). This analysis confirmed that the electrical characteristics of large junctions are dominated by thin-area defects, while small junctions are dominated by the molecular structure.