4.6 Article

Synthesis and Characterization of Gallium-Doped CdSe Quantum Dots

期刊

JOURNAL OF PHYSICAL CHEMISTRY C
卷 119, 期 19, 页码 10749-10757

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.5b01963

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资金

  1. Grant ACS PRF from the Donors of the Petroleum Research Fund [49320-DNI10]
  2. NSF [EPS-0903806]
  3. Kansas State University
  4. Camille and Henry Dreyfus Foundation
  5. Office Of The Director
  6. Office of Integrative Activities [0903806] Funding Source: National Science Foundation

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Developing electronic doping of colloidal quantum dots is important for basic science and technology. In this article, the doping of colloidal CdSe quantum dots with gallium atoms is reported. Gallium doping of CdSe quantum dots produces important changes in electronic and optical properties of the material. The gallium doping shows a significant impact on the growth kinetics of quantum dots, which reveals important clues about the mechanism of the gallium dopant incorporation into the CdSe. The results show that the gallium doping significantly impacts the conductivity of CdSe thin film made of the quantum dots as well as the photoluminescence and chemical reactivity of the quantum dots, in agreement with the expected n-type character.

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