期刊
JOURNAL OF PHYSICAL CHEMISTRY C
卷 119, 期 35, 页码 20231-20236出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.5b02282
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资金
- R&D pioneer program of ETRI
- 'New & Renewable Energy' Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korean government Ministry of Trade, Industry Energy [20123030010030, 20153010011990]
- R&D Convergence Program of MSIP (Ministry of Science, ICT and Future Planning)
- ISTK (Korea Research Council for Industrial Science and Technology) of the Republic of Korea [B551179-12-01-00]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20153010011990, 20123030010030] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [B551179-12-01-00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
To investigate the origin of the Na effect on photovoltaic (PV) devices, Cu(In,Ga)Se-2 (CIGS) and CdS/CIGS layers were grown on borosilicate (BS) and soda-lime glass (SLG), respectively. The defect states and nonequilibrium carrier dynamics of the samples were measured using photoluminescence (PL) and optical pump-THz probe (OPTP) spectroscopy. From the PL results, we discovered that different shallow donor-acceptor levels were formed in the CIGS layer grown on BS and SLG, respectively. In the OPTP results, relaxation times of photocarriers excited from the CdS/CIGS layer were clearly distinguishable, and are explained by the formation of different defect states depending on substrates. In BS, deep defect level 'DX states' were formed in the E-g near the p-n junction, which induce trapping photocarriers, resulting in shortening relaxation time. In SLG, there was no DX state, which clearly demonstrates the positive effect of Na atoms at the p-n junction on performance of PV devices.
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