期刊
EARTH AND PLANETARY SCIENCE LETTERS
卷 355, 期 -, 页码 109-118出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.epsl.2012.07.035
关键词
silicon isotopes; Ge/Si ratios; banded iron formation; Archaean; Pongola Supergroup
资金
- Fonds pour la formation a la Recherche dans l'Industrie et dans l'Agriculture (FRIA) of Belgium
- Federal Belgian Science Policy
- National Research Foundation of South Africa
- Fonds National de la Recherche Scientifique (FNRS) [FRFC 2.4.512.00F]
- FNRS [FRFC 2.4579.04]
In order to determine the origin of silicon (Si) in banded iron formation (BIF), we have undertaken a multi-tracer study combining REE+Y data, Ge/Si ratios and Si isotopes (delta Si-30) on stratigraphically resolved layers from a similar to 2.95 Ga BIF from the Pongola Supergroup, South Africa. Si in both Si-rich and Fe-rich layers has a common origin, represented by a seawater reservoir strongly influenced by continent-derived freshwaters (similar to 10%) and very limited (<0.1%) high-T hydrothermal fluids as indicated by Eu anomalies and Y/Ho ratios. The coevolution of delta Si-30 signatures of Si- and Fe-rich layers of the BIF coupled with similar Eu and Y anomalies in both types of layers is in accordance with a common silica precipitation promoted by Si adsorption onto Fe-oxyhydroxides from Archaean seawater. An increase in delta Si-30 values from -2.27 parts per thousand to -0.53 parts per thousand stratigraphically upwards in the BIF is inferred to be the result of two successive isotopic fractionation processes during (1) silicon adsorption onto the Fe-oxyhydroxide precursor and (2) silica precipitation at the sediment water interface from pore fluid triggered by the local silica saturation consecutive to an early diagenetic Si desorption from the precursor Fe-oxyhydroxide. The first fractionation process depleted the parental water in Si-28 while the second released Si-30 back into the parental water, resulting in an increase of the delta Si-30 value of the parental water reservoir over time. (C) 2012 Elsevier B.V. All rights reserved.
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