期刊
ACS NANO
卷 9, 期 2, 页码 1561-1570出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b00437
关键词
graphene; quantum dots; deep-UV; photodetectors; asymmetric electrodes
类别
资金
- National Basic Research Program of China [2012CB932400]
- Major Research Plan of the National Natural Science Foundation of China [91233110]
- National Natural Science Foundation of China [51172151]
- Priority Academic Program Development of Jiangsu Higher Education Institutions
- Collaborative Innovation Center of Suzhou Nano Science and Technology
Fast-response and high-sensitivity deep-ultraviolet (DUV) photodetectors with detection wavelength shorter than 320 nm are in high demand due to their potential applications in diverse fields. However, the fabrication processes of DUV detectors based on traditional semiconductor thin films are complicated and costly. Here we report a high-performance DUV photodetector based on graphene quantum dots (GQDs) fabricated via a facile solution process. The devices are capable of detecting DUV light with wavelength as short as 254 nm. With the aid of an asymmetric electrode structure, the device performance could be significantly improved. An on/off ratio of similar to 6000 under 254 nm illumination at a relatively weak light intensity of 42 mu W cm(2) is achieved. The devices also exhibit excellent stability and reproducibility with a fast response speed. Given the solution-processing capability of the devices and extraordinary properties of GQDs, the use of GQDs will open up unique opportunities for future high-performance, low-cost DUV photodetectors.
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