期刊
DIAMOND AND RELATED MATERIALS
卷 45, 期 -, 页码 58-63出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2014.03.006
关键词
Carbon nitride; CNx; Energetic deposition; N-doped carbon; Cathodic arc
The intrinsic stress, film density and nitrogen content of carbon nitride (CNx) films deposited from a filtered cathodic vacuum arc were determined as a function of substrate bias, substrate temperature and nitrogen process pressure. Contour plots of the measurements show the deposition conditions required to produce the main structural forms of CNx including N-doped tetrahedral amorphous carbon (ta-C:N) and a variety of nitrogen containing graphitic carbons. The film with maximum nitrogen content (similar to 30%) was deposited at room temperature with 1.0 mTorr N-2 pressure and using an intermediate bias of -400 V. Higher nitrogen pressure, higher bias and/or higher temperature promoted layering with substitutional nitrogen bonded into graphite-like sheets. As the deposition temperature exceeded 500 degrees C, the nitrogen content diminished regardless of nitrogen pressure, showing the meta-stability of the carbon-nitrogen bonding in the films. Hardness and ductility measurements revealed a diverse range of mechanical properties in the films, varying from hard ta-C:N (similar to 50 GPa) to softer and highly ductile CNx which contained tangled graphite-like sheets. Through-film current-voltage characteristics showed that the conductance of the carbon nitride films increased with nitrogen content and substrate bias, consistent with the transition to more graphite-like films. (C) 2014 Elsevier B.V. All rights reserved.
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