期刊
DIAMOND AND RELATED MATERIALS
卷 21, 期 -, 页码 24-27出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2011.10.008
关键词
Amorphous carbon; Magnetron sputtering; Photoconductivity; Pd doping
类别
资金
- Ministry of Education of China [708061]
- Natural Science Foundation of China [10974258]
- Program for New Century Excellent Talents in University [NCET-08-0844]
- Natural Science Foundation of Shandong Province [ZR2010AL009]
- Fundamental Research Funds for the Central Universities [10CX05001A]
The Pd doped amorphous carbon (a-C:Pd) films were deposited on n-Si substrates with a native SiO2 layer using direct current magnetron sputtering. The dark and photo current-voltage (I-V) characteristics of the a-C:Pd/SiO2/Si were investigated. It is found that under white light illumination of 20 mW/cm(2) at room temperature, the a-C:Pd/SiO2/Si fabricated at 350 degrees C has a large photoconductivity (the ratio of photocurrent to dark current) of 2000. which is much better than that of the a-C based junctions reported before. The large photoconductivity is attributed to the great increment of the reverse conductivity of the a-C:Pd/SiO2/Si under illumination, which is caused by the Pd doping. (C) 2011 Elsevier B.V. All rights reserved.
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