Characterization of crystallographic defects in homoepitaxial diamond films by synchrotron X-ray topography and cathodoluminescence

Crystallographic defects in a p-type homoepitaxial diamond film grown by microwave plasma-assisted chemical vapor deposition on a synthetic high-pressure high-temperature type-Ib (001) substrate were characterized by synchrotron radiation X-ray diffraction topography (XRT) and cathodoluminescence (CL). CL mapping indicated typical luminescent spots corresponding to the band-A emission around 420 nm. The band-A spots correspond to the spots observed by XRT for both diffraction vectors g = [044] and [404], and are considered to be mixed dislocations with a dislocation direction t=[001]. Typical dislocations in the film, such as edge and perfect 60 degrees dislocations were determined by utilizing the relationship between the diffraction vector g, Burgers vector b, and the dislocation line vector t. (C) 2011 Elsevier B.V. All rights reserved.