期刊
DIAMOND AND RELATED MATERIALS
卷 19, 期 1, 页码 1-6出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2009.09.015
关键词
Wide bandgap; Power semiconductor devices; Semiconductor materials
Temperature dependent properties of wide bandgap semiconductors have been used to calculate theoretical specific on-resistance. breakdown voltage, and thermal run-away temperature in SiC GaN, diamond, and Si vertical power devices for comparison It appears mainly that diamond is interesting for high power devices for high temperature applications. At room temperature, diamond power devices should be superior to SiC only for voltage higher than 30-40 kV due to the high energy activation of the dopants (C) 2009 Elsevier B.V. All rights reserved
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据