期刊
DIAMOND AND RELATED MATERIALS
卷 18, 期 10, 页码 1211-1217出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2009.04.003
关键词
Nitrogen-doped amorphous carbon; Electrochemical electrode; Semiconductor properties; Redox responses
类别
资金
- The Government of Australia
The semiconductor capacitances of the nitrogen-doped amorphous carbon (a-C:N) materials with different sp(3)/sp(2) C ratios were studied as a function of electrode potential in a-C:N/aqueous electrolyte systems. This dependence of capacitance on electrode potential in aqueous 0.1 M NaOH shows that the investigated a-C:N materials are intrinsic semiconductors. The space-charge layers inside the a-C:N electrodes behave similar to a Helmholtz layer because of the presence of surface states when the electrolytes contain O-2 or anions other than OH-. The lower density and mobility of carriers of materials with a higher sp(3) C fraction within the a-C:N material causes a suppression of redox reactions, and the lower density of carriers contributes to a lower capacitance. (C) 2009 Elsevier B.V. All rights reserved.
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