期刊
DIAMOND AND RELATED MATERIALS
卷 17, 期 7-10, 页码 1780-1784出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2008.02.003
关键词
gallium nitride (GaN); plasma CVD; nanostructures; nanofibers
The growth of high-quality straight GaN nanowires has been achieved by the reaction of Ga vapor with N-2 plasma in a horizontal furnace with dielectric barrier discharge (DBD). The diameters of GaN nanowires range from 70-100nm, depending on the particle sizes of Au catalysts, and their lengths are up to several micrometers. On the other hand, GaN nanowires of vermicular-shape were observed on the substrate when using N-2 gas reactant without igniting the discharge. High-resolution transmission electron microscopy (TEM) analysis reveals the formation of high crystalline quality single-crystal GaN nanowires with elongation along [100] direction. The results demonstrate that DBD-type N-2 plasma effectively induces high-quality growths of GaN nanowire single crystallites using the furnace. (C) 2008 Elsevier B.V. All rights reserved.
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