期刊
DALTON TRANSACTIONS
卷 43, 期 44, 页码 16666-16672出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4dt01930j
关键词
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资金
- Research Council of Norway [200030]
Thin films of sodium and potassium oxides have for the first time been deposited using atomic layer deposition. Sodium and potassium complexes of tert-butanol, trimethylsilanol and hexamethyldisilazide have been evaluated as precursors by characterising their thermal properties as well as tested in applications for thin film depositions. Out of these, sodium and potassium tert-butoxide and sodium trimethylsilanolate and hexamethyldisilazide were further tested as precursors together with the Al(CH3)(3) + H2O/O-3 process to form aluminates and together with ozone to form silicates. Sodium and potassium tert-butoxide and sodium trimethylsilanolate showed self-limiting growth and proved useable at deposition temperatures from 225 to 375 or 300 degrees C, respectively. The crystal structures of (NaOBu)-Bu-t and (KOBu)-Bu-t were determined by single crystal diffraction revealing hexamer- and tetramer structures, respectively. The current work demonstrates the suitability of the ALD technique to deposit thin films containing alkaline elements even at 8'' wafer scale.
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