期刊
DALTON TRANSACTIONS
卷 42, 期 36, 页码 13112-13117出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3dt51795k
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资金
- Japan Society for the Promotion of Science (JSPS)
- Japan Science and Technology Agency (JST)
Epitaxial thin films of Al-doped Li7La3Zr2O12 (LLZO) with a cubic garnet-type structure were successfully synthesized using pulsed laser deposition to investigate the lithium ion conduction in grains. Two orientations of the films were obtained depending on the Gd3Ga5O12 (GGG) substrate orientation, LLZO(001)/GGG(001) and LLZO(111)/GGG(111). The ionic conductivities in the grains of the (001) and (111) films were 2.5 x 10(-6) and 1.0 x 10(-5) S cm(-1) at 298 K, respectively, which were lower than those of polycrystalline LLZO of over 10(-4) S cm(-1). X-ray reflectometry and inductively coupled plasma mass spectrometry revealed a large amount of Al3+ of over 0.6 moles substituted for Li+. These results indicate that the Al3+ substitution in the LLZO lattice decreases the number of movable lithium ions and blocks the three-dimensional lithium migration pathway. The lattice mismatch between the film and the substrate induced the lattice distortion of the LLZO, resulting in different conductivities between the (001) and (111) films. The epitaxial-film model system directly clarified a substantial impact of the Al substitution and the lattice distortion on the lithium ion conductivity in the LLZO.
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