期刊
ACS NANO
卷 9, 期 7, 页码 7536-7544出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b02734
关键词
PbSe; colloidal nanowires; selective doping; pn junction; CMOS inverter; photodiode
类别
资金
- NSF [DMR-1309053]
- U.S. Department of Energy Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-SC0002158]
We report the controlled and selective doping of colloidal PbSe nanowire arrays to define pn junctions for electronic and optoelectronic applications. The nanowires are remotely doped through their surface, p-type by exposure to oxygen and n-type by introducing a stoichiometric imbalance in favor of excess lead. By employing a patternable poly(methyl)methacrylate blocking layer, we define pn junctions in the nanowires along their length. We demonstrate integrated complementary metal-oxide semiconductor inverters in axially doped nanowires that have gains of 15 and a near full signal swing. We also show that these pn junction PbSe nanowire arrays form fast switching photodiodes with photocurrents that can be optimized in a gated-diode structure. Doping of the colloidal nanowires is compatible with device fabrication on flexible plastic substrates, promising a low-cost, solution-based route to high-performance nanowire devices.
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