期刊
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE
卷 16, 期 2, 页码 91-99出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.cossms.2012.01.003
关键词
Heteroepitaxy; Selective area growth; Selective area heteroepitaxy; III-V on Si; SiGeSn on Si; Epitaxial lateral overgrowth; Silicon photonics; Monolithic integration
资金
- Swedish Research Council (VR)
- Swedish Foundation for Strategic Research (SSF)
This article reviews the major achievements in recent years on heteroepitaxy and selective area heteroepitaxy that are relevant to silicon photonics. Material aspects are given due importance without trying to cover all kinds of devices. Under heteroepitaxy several systems based on GaAs, InP and GaSb and their related materials and dilute III-nitrides all on Si substrates are covered and assessed. Quantum dot and quantum well lasers are taken as device examples. The potential of the emerging SnGeSi/Si system is highlighted. Under selective area heteroepitaxy, growth of InP from SiO2 trenches in Si and epitaxial lateral overgrowth of InP on silicon are exemplified as the potential routes for monolithic integration on silicon. The expected trends and anticipated advances are indicated. (c) 2012 Elsevier Ltd. All rights reserved.
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