期刊
CURRENT APPLIED PHYSICS
卷 14, 期 3, 页码 462-466出版社
ELSEVIER
DOI: 10.1016/j.cap.2013.12.019
关键词
Solution-processed high-k; Resistive switching; Oxygen vacancy; Conduction mechanism
资金
- Kwangwoon University
- National Research Foundation of Korea
- Ministry of Education, Science and Technology [2013-011202]
Resistive switching characteristics of solution-processed high-k thin films (HfOx and TaOx) were investigated for ReRAM applications. The thickness of solution-processed high-k thin films can be easily controlled by simple spin coating. We optimized the critical thickness of solution-processed HfOx and TaOx thin films, for reliable ReRAM operations. A similar bipolar resistive switching behavior was observed from both solution-processed and sputter-processed HfOx films. Furthermore, it was found that the solution-processed HfOx and TaOx films have a uniform resistive switching characteristic. The dominant conduction of these solution-processed films is described by Ohmic conduction in the low-resistance state. On the other hand, Ohmic conduction at low voltage and Poole-Frenkel emission at high voltage dominate in the high-resistance state. It was verified that the solution-processed HfOx and TaOx films have superior endurance and retention characteristics. Therefore, ReRAM devices based on solution-processed high-k materials are expected to be a promising candidate, for usage of resistive memory in glass substrate or flexible substrate based electronic devices. (C) 2013 Elsevier B.V. All rights reserved.
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