期刊
CURRENT APPLIED PHYSICS
卷 14, 期 12, 页码 1775-1778出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2014.10.007
关键词
Ferromagnetic semiconductor; Magnetic anisotropy; Planar Hall effect
资金
- Converging Research Center Program through the Ministry of Science, ICT and Future Planning [NRF-2014M3C1A8053744]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2013R1A1A2004505]
- National Science Foundation [DMR14-00432]
- Korea University Grant
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1005851] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1400432] Funding Source: National Science Foundation
We have systematically investigated the influence of annealing on the magnetic anisotropy properties of GaMnAs film using an epilayer with a Mn concentration of 6.2%. The GaMnAs epilayer was grown by molecular beam epitaxy and the planar Hall effect measurement was used to monitor the magnetic anisotropy of the film. We found significant annealing-induced changes in the magnetic anisotropy properties of the GaMnAs film that depended on the annealing conditions. For example, the cubic anisotropy that gave a four-fold symmetry of magnetic easy axes decreased while the uniaxial anisotropy that gave a two-fold symmetry of magnetic easy axes increases in the samples annealed temperature below 300 degrees C. In particular, the uniaxial anisotropy along the [010] direction in as-grown GaMnAs film changed to the [100] direction by rotating by 90 degrees after the sample was annealed at 300 degrees C for 3 h. This investigation thus indicates that the magnitude and the direction of the magnetic anisotropy in the GaMnAs film can be effectively controlled by choosing an appropriate annealing time and temperature. (C) 2014 Elsevier B.V. All rights reserved.
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