期刊
CURRENT APPLIED PHYSICS
卷 12, 期 3, 页码 940-944出版社
ELSEVIER
DOI: 10.1016/j.cap.2011.12.014
关键词
Organic resistive memory; Conventional photolithography; Embedded electrodes
资金
- National Research Laboratory
- National Core Research Center [R15-2008-006-03002-0]
- World Class University (WCU)
- Korean Ministry of Education, Science, and Technology
- Program for Integrated Molecular Systems (PIMS) at GIST
- GIST Specialized Research International Cooperation (GSR_IC)
We demonstrate the application of conventional photolithography to fabricate organic memory devices in an array structure with a cell area of 4 x 4 mu m(2) without damaging the underlying organic memory layer. Applying photolithography to organic electronic devices is not trivial because the solvents used during lithography may dissolve and damage the previously coated organic layers. The application of photolithography to our organic devices was possible because of the introduction of polymethyl methacrylate (PMMA)/polyvinyl alcohol (PVA) onto the memory active layer, where PMMA functions as a buffer layer to prevent dissolution of the PVA layer during developing process, and PVA acts as a striped layer during metal lift-off process. Embedded Al bottom electrodes were particularly constructed to minimize the switching failure. The completed organic memory devices exhibited typical unipolar switching behavior and excellent memory performance in terms of their statistical memory parameters (ON and OFF currents and threshold voltages), ON/OFF ratio (>10(2)), endurance (>230 cycles), and retention (>10(4) s). This convenient photolithography patterning technique is applicable for the further scaling of many types of organic devices. (C) 2011 Elsevier B.V. All rights reserved.
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