4.4 Article

Synthesis of graphene ribbons using selective chemical vapor deposition

期刊

CURRENT APPLIED PHYSICS
卷 12, 期 4, 页码 1113-1117

出版社

ELSEVIER
DOI: 10.1016/j.cap.2012.02.005

关键词

Graphene; CVD; Transfer; Graphene ribbon; Selective growth

资金

  1. National Research Foundation of Korea (NRF)
  2. Korea government (MEST) [KRF-2008-313-D00383, 2010-0000141, 2010-0027810]
  3. Priority Research Centers through the National Research Foundation of Korea (NRF)
  4. Ministry of Education, Science and Technology [2011-0018395]
  5. National Research Foundation of Korea [2008-0057449, 2010-0020207] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

A new method for implementing graphene ribbons using selective graphene growth on metal-sidewall by chemical vapor deposition has been proposed. In this method, Ni catalyst is pre-patterned before chemical vapor deposition, and graphene film is selectively grown on the sidewall of the nickel for graphene ribbons. The graphene ribbons were confirmed by TEM image and Raman spectroscopy, and the fabricated graphene ribbon transistors showed well gate-modulated output characteristics. We believe this sidewall-graphene could be useful for applications such as graphene sensors which require high surface area of graphene. (C) 2012 Elsevier B. V. All rights reserved.

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