期刊
CURRENT APPLIED PHYSICS
卷 12, 期 -, 页码 S69-S74出版社
ELSEVIER
DOI: 10.1016/j.cap.2012.04.020
关键词
Strained Si wafer; X-ray topography; Lattice undulation; Synchrotron radiation; Thin film back-gate transistor
资金
- Global Centers of Excellence (COE) Program, Center for Atomically Controlled Fabrication Technology, from the Ministry of Education, Culture, Sports, Science, and Technology in Japan
We investigated the crystalline quality of supercritical-thickness strained silicon-on-insulator (SC-sSOI) wafers by synchrotron X-ray topography and its correlation with electrical characteristics by use of back-gate transistors. Several types of contrast showing crystalline imperfections were observed over the entirety of the wafers, such as macule and crosshatch patterns in X-ray topographs. From the analysis of a series of X-ray topographs obtained by changing the angle of incidence relative to the sample surface, we obtained two-dimensional distributions of lattice inclination and strain, indicating that the crosshatch patterns observed in the X-ray topographs were caused by fluctuation of the lattice inclination. Transistors located in an area of large lattice inclination deviated from the average drain current-gate voltage curves, showing a correlation between lattice inclination and electrical properties. (c) 2012 Elsevier B.V. All rights reserved.
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