期刊
CURRENT APPLIED PHYSICS
卷 11, 期 1, 页码 S109-S112出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2010.11.042
关键词
Zinc telluride; Doping; Sodium; Sodium telluride
Low resistivity p-type ZnTe film was formed by close-spaced sublimation utilizing sodium compounds as sodium source for doping. Sodium was incorporated during film deposition with ZnTe sources containing various amount of Na2Te, Na3PO4, or NaCl. Film resistivity of less than 1 Omega cm with hole concentration of 6 x 10(17) cm(-3) was achieved by doping with Na2Te. However, doping with Na3PO4 or NaCl was less effective in reducing the resistivity of ZnTe film due to low carrier concentration. Hole mobility was correlated with the microstructure of the ZnTe film, which strongly depends on the kind and content of sodium compound in the source. (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据