期刊
CURRENT APPLIED PHYSICS
卷 10, 期 1, 页码 E87-E89出版社
ELSEVIER
DOI: 10.1016/j.cap.2009.12.021
关键词
Spin transfer torque; MRAM; Perpendicular; MTJ; Critical switching currents; Damping constant; Fe alloy; Gbits density
An Fe-based perpendicular alloy with small damping constant was applied to an MTJ storage layer and small switching current of 9 mu A was obtained for a write current width of 5 ms. The efficiency of spin transfer torque writing was proved to be higher than those for in-plane MTJs. The estimated Ic for the MTJ with 50 nsec pulse width is lower than 20 mu A and smaller than the drive currents of CMOS transistor at Gbits density. (C) 2010 Elsevier B.V. All rights reserved.
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