期刊
CURRENT APPLIED PHYSICS
卷 10, 期 2, 页码 703-707出版社
ELSEVIER
DOI: 10.1016/j.cap.2009.09.004
关键词
GaN; Nanowire; Electric field; Alignment
资金
- Office of Naval Research and Office of Naval Research-Global [N62909-09-1-4060]
This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current-voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts, confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz-5 MHz. (C) 2009 Elsevier B.V. All rights reserved.
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