期刊
CURRENT APPLIED PHYSICS
卷 9, 期 2, 页码 414-416出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2008.03.018
关键词
Leakage currents; Edge shunt; Light emitting diodes
资金
- Spanish Ministry of Education and Science [CSD2007-00007]
- European Science Foundation and Ministerio de Educacion y Ciencia [MAT2006-28187-E]
- Program Ramon y Cajal
Observation of leakage current paths through the device perimeter in standard poly(phenylene vinylene)-based light-emitting devices is reported. Perimeter leakage currents govern the diode performance in reverse and low positive bias and exhibit an ohmic character. Current density correlates with the perimeter-to-area ratio thus indicating that leakage currents are mainly confined on polymer regions in the vicinity of metallic contact limits (device perimeter). (C) 2008 Elsevier B.V. All rights reserved.
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