期刊
CRYSTENGCOMM
卷 16, 期 14, 页码 2892-2897出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ce42330a
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资金
- National Nature Science Foundation of China [51002116, 51102193, 51202183, 51372196]
- China Postdoctoral Science Foundation
- Fundamental Research Funds for the Central Universities
Single domain relaxor-PT crystals are important from both fundamental and application viewpoints. Compared to domain engineered relaxor-PT crystals, however, single domain crystals are prone to cracking during poling. In this paper, based on the analysis of the cracking phenomenon in [001] poled tetragonal 0.25Pb(In0.5Nb0.5)O-3-0.37Pb(Mg1/3Nb2/3)O-3-0.38PbTiO(3) (PIN-PMN-PT) crystals, the non-180 degrees ferroelastic domain switching was thought to be the dominant factor for cracking during the poling process. A high temperature poling technique, by which the domain switching can be greatly avoided, was proposed to achieve the single domain relaxor-PT crystals. By this poling approach, a quasi-single domain crystal was obtained without cracks. In addition, compared to room temperature poling, the high temperature poled PIN-PMN-PT crystals showed improved electromechanical properties, i.e., a low dielectric loss, a low strain-electric field hysteresis and a high mechanical quality factor, demonstrating a beneficial poling approach.
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