Electrical properties of diamond single crystals co-doped with hydrogen and boron

In this paper, diamond single crystals co-doped with H and B were successfully synthesized under a fixed pressure of 6.0 GPa and temperature ranging from 1560 to 1600 K. In the synthesized diamond, hydrogen was found to be mainly incorporated as sp(3) CH2, which had been detected by its characteristic stretching absorptions at 2920 cm(-1) and 2850 cm(-1) from the Fourier transform infrared spectra. Raman measurements indicated that the diamonds co-doped with B and H had a more compatible lattice structure than B-doped diamond. Hall effect measurements indicated that the co-doped diamonds showed p-type semiconductor behavior. Besides, the Hall mobility was nearly equivalent between B-doped and co-doped diamond crystals, while the concentrations of the carrier and conductivity of the co-doped diamonds were higher than that of the B-doped diamond crystals.