Molten-salt-mediated synthesis of SiC nanowires for microwave absorption applications

Silicon carbide (SiC) nanowires were synthesized by a reaction of multiwall carbon nanotubes (MWCNTs) and silicon vapor from molten salt medium at 1250 degrees C. The phase, morphology, and microstructure of the nanowires were systemically characterized by X-ray diffraction, field emission scanning electron microscopy, and high resolution transmission electron microscopy. The results revealed that the nanowires were of single-crystalline beta-SiC phase with the growth direction along [111] and had diameters of 20-80 nm and lengths up to several tens of micrometers. The molten salt introduced facilitated the evaporation of Si (vapor) onto MWCNTs (solid) and the growth of SiC nanowires followed the vapor-solid process. The investigation of microwave absorbability indicated that a minimum reflection loss of -17.4 dB at 11.2 GHz could be achieved with 30 wt% SiC nanowires as the filler in the silicone matrix. The attenuation of microwave could be attributed to the dielectric loss and a possible absorption mechanism was also discussed.