期刊
ACS NANO
卷 9, 期 3, 页码 2836-2842出版社
AMER CHEMICAL SOC
DOI: 10.1021/nn506817y
关键词
carbon nanotube; wafer-scale fabrication; nanoprecision; field-effect transistors; resonators; hysteresis-free; in situ tuning
类别
资金
- Swiss Nanotera project CABTURES
We report wafer-level fabrication of resonant-body, carbon nanotube (CNT)field-effect transistors (FETs) in a dual-gate configuration. An integration density of >10(6) CNTFETs/cm(2), an assembly yield of >80%, and nanoprecision have been simultaneously obtained. Through combined chemical and thermal treatments, hysteresis-free (in vacuum) suspended-body CNTFETs have been demonstrated. Electrostatic actuation by lateral gate and FET-based readout of mechanical-resonance have been achieved at room temperature. Both upward and downward in situ frequency tuning has been experimentally demonstrated in the dual-gate architecture. The minuscule mass, high resonance frequency, and in situ tunability of the resonant CNTFETs offer promising features for applications in radio frequency signal processing and ultrasensitive sensing.
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