期刊
CRYSTAL GROWTH & DESIGN
卷 14, 期 4, 页码 1617-1622出版社
AMER CHEMICAL SOC
DOI: 10.1021/cg401652f
关键词
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资金
- Federal Ministry for Education and Research (BMBF) within the Centre for Innovation Competence SiLi-nano [03Z2HN12]
We report on the synthesis of a novel optoelectronic material, Sn-rich Ge1-xSnx nanocrystals in a Ge matrix. The nanocrystals have been formed after annealing of a metastable Ge-rich Ge1-ySny film, which was embedded in the Ge matrix. Electron microscopy investigations have revealed that these nanocrystals possess two lattice types: (i) a diamondlike cubic structure with a high Sn fraction (x > 0.5) and (ii) an ordered zincblende structure (x = 0.5).
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