期刊
CRYSTAL GROWTH & DESIGN
卷 13, 期 8, 页码 3475-3480出版社
AMER CHEMICAL SOC
DOI: 10.1021/cg4003737
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资金
- EU [280694]
- Niedersachsische Technische Hochschule (NTH)
- Engineering and Physical Sciences Research Council [EP/D080762/1, EP/I035501/1] Funding Source: researchfish
- EPSRC [EP/I035501/1, EP/D080762/1] Funding Source: UKRI
Arrays of dislocation free uniform Ga-polar GaN columns have been realized on patterned SiOx/GaN/sapphire templates by metal organic vapor phase epitaxy using a continuous growth mode. The key parameters and the physical principles of growth of Ga-polar GaN three-dimensional columns are identified, and their potential for manipulating the growth process is discussed. High aspect ratio columns have been achieved using silane during the growth, leading to n-type columns. The vertical growth rate increases with increasing silane flow. In a core-shell columnar LED structure, the shells of InGaN/GaN multi quantum wells and p-GaN have been realized on a core of n-doped GaN column. Cathodoluminescence gives insight into the inner structure of these core-shell LED structures.
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