期刊
CRYSTAL GROWTH & DESIGN
卷 12, 期 10, 页码 4703-4707出版社
AMER CHEMICAL SOC
DOI: 10.1021/cg300791w
关键词
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资金
- The Japan Society for the Promotion of Science (JSPS)
- Industrial Technology Research Grant Program from NEDO
- Grants-in-Aid for Scientific Research [22686003] Funding Source: KAKEN
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic suicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminated Fe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films, whereas the Fe-terminated one causes the three-dimensional epitaxial growth of Ge films. The high-quality Ge grown on the Si-terminated surface has almost no strain, meaning that the Ge films are not grown on the low-temperature-grown Si buffer layer but on the lattice matched metallic Fe3Si. This study will open a new way for vertical-type Ge-channel transistors with metallic source/drain contacts.
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