期刊
CRYSTAL GROWTH & DESIGN
卷 10, 期 1, 页码 36-39出版社
AMER CHEMICAL SOC
DOI: 10.1021/cg901189k
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资金
- DARPA MTO [NBCH1050002]
- Center for Interfacial Engineering of MEMS
- National Science Foundation [EEC-0425914, CMMI-0825531]
The epitaxial growth of 3C-SiC films Si(100) substrates is demonstrated using a two-step chemical vapor deposition (CVD) process. A thin (50 nm) SiC buffer layer grown at 925 degrees C using 1,3-disilabutane is shown to enable the growth of a high crystalline quality epitaxial 3C-SiC film using methyltrichlorosilane at 1200 degrees C. The ability to deposit high-quality epitaxial film is traced to the suppression of void defects and to the improvement in film adhesion obtained by the deposition of the buffer layer at low temperature.
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