期刊
CRYSTAL GROWTH & DESIGN
卷 10, 期 9, 页码 4197-4202出版社
AMER CHEMICAL SOC
DOI: 10.1021/cg1008335
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资金
- Monte dei Paschi di Siena
- Ministero degli Affari Esteri
- EU [NODE 015783]
- FIRB [RBI-N067A39_002]
- Indo-Italian POC
- CSIR
We report the Pd-assisted chemical beam epitaxy growth of zinc blende InAs nanowires which are grown on InAs(111)A substrates by employing Pd octane and hexadecyl thiolates as catalyst precursors. The structural properties of these nanowires are investigated by scanning and transmission electron microscopy. Furthermore, we demostrate the growth of InAs nanowires on patterned substrates by employing the Pd hexadecylthiolate precursors as a direct-write resist in electron beam lithography.
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